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This paper reported a miniaturized sensitive gravimetric gas sensor based on film bulk acoustic resonator (FBAR). The sensitivity of the FBAR gas sensor was enhanced 10∼20 times after coating with nanomaterials (metal organic frameworks (MOFs)). A facile coating process of MOFs on FBARs was disclosed for the first time. Furthermore, utilizing FBAR sensors as detectors was firstly demonstrated in a...
LED lighting has been used for illumination in a long history. Using spectrum control through LED colour mixing and colour control, the spectrum of the light can be adjusted and hence the performance of the illumination can be controlled. Using this method, the illumination spectrum can be adjusted during the day and night. It is also shown that this will have benefit to breast cancer and depression...
Powerful wireless devices carried by humans can form human contact-based networks. Such networks often suffer from intermittent connectivity. Thus, providing an effective information dissemination feature in such networks is very important. In this paper, we explore a cooperative user centric information dissemination scheme which allows published data items to be delivered to interested nodes efficiently...
This paper reports Super-Junction NLDMOS device implemented in Freescale's 0.13 μm SOI based Smart Power IC technology. This SJ device can be operated at both high and low side applications without back-gate effect. It achieves breakdown voltage of 111V and Rds.on × area of 138 mΩ.mm2 with robust characteristics.
Modern scientific enterprises are inherently knowledge-intensive. In general, scientific studies in domains such as geoscience, chemistry, physics and biology require the acquisition and manipulation of large amounts of experimental and field data in order to create inputs for large-scale computational simulations. The results of these simulations must then be analyzed, leading to refinements of inputs...
In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade-off. The proposed device uses standard process steps available in integrated technology platforms to give a breakdown as high as 150 V with ground-breaking...
We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 mOmegaldrmm2 and Figure of Merit (RontimesQg) of 8.4 mOmegaldrnC with optimized metal layout. This novel device also shows good Hot Carrier Injection (HCI) immunity.
In this paper, a novel Schottky diode structure based on the superjunction concept is proposed. The concept is based on 2-carrier current conduction and utilizes both P and N columns for current conduction. The proposed device utilized the P and N superjunction columns to achieve high breakdown with low leakage current.
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