Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
This paper reports the growth of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostructures by MOCVD for applications in optoelectronics. Field emission scanning electron microscopy, low temperature photoluminescence, room temperature microphotoluminescence and transmission electron microscopy are used to characterize the nanowires.
Terahertz photonics is a rapidly growing field. The ultra-fast dynamics of charge carriers in semiconductors is closely linked to the performance of THz photonic devices. We study a range of ion-implanted and nano-scale semiconductors for application in novel terahertz devices.
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs...
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures...
In this article, we will describe our recent results in terms of micro-laser semiconductor devices. Currently, we are working on the design, fabrication and characterisation of III-V semiconductor laser devices for optical communications, computer networks, defence and biological applications. We will consider two laser devices in this article: a laterally coupled distributed feedback laser and a...
In this talk, main activities and progress in the areas of compound semiconductor quantum dots and nanowires, and device integration in Semiconductor Optoelectronics and Nanotechnology Group at the Australian National University will be addressed.
In this contribution a detailed characterisation of the performance of three-contact polarisation-sensitive terahertz detectors will be discussed. Furthermore the appropriate mathematical formalism required for the analysis of polarisation-resolved THz measurements will be presented. In addition, measurements of the polarisation-resolved transmission of quartz and polarisation-resolved emission of...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with...
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth.
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.
We have performed one and two colour, spectrally resolved four-wave mixing (FWM) experiments on a series of ZnO/Zn1-xMgxO quantum wells with different oxygen ion implantation doses. The results show that at room temperature and with resonant excitation, excitonic coherences are maintained beyond the duration of the laser pulse. A transient signal observed at negative delays in the two-colour experiments...
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices
We review our results on integrated photonic devices fabricated using In GaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. We will also review the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures...
Ultrafast charge carrier dynamics in semiconducting materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk...
In this work, rapid thermal annealing was performed on InGaAs/GaAs quantum dot infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a blue-shifted wavelength and the spectral response exhibited red-shift from the annealed QDIPs in comparison with the as-grown sample. The overall device performance was not affected by low annealing temperature however for high annealing...
The performance characteristics of InGaAs/GaAs quantum-dots-in-a-well infrared photodetectors grown by MOCVD are reported. A responsivity of 40mA/W at the peak detectivity of 3.2 109 cmHz/W has been achieved at a temperature of 77K. In an effort to understand the spectral behavior of the characterized devices band structure modeling has been performed.
The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs...
This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.