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For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail.
Energy-dispersive Photon Emission Microscopy (PEM) allows the local electron temperature distribution to be characterized with high accuracy and sensitivity. The suitability and potential of this new technique for failure analysis and reliability investigation of semiconductor devices are demonstrated by the spatially resolved analysis of non-uniform breakdowns. With state-of-the-art devices in nanometer...
In this paper, the application of scanning near-field photon emission microscopy for imaging photon emission sites is demonstrated. Photon emissions generated by a Fin-FET test structure with one metallization layer are imaged with spatial resolution of 50 nm using scattering dialectic probe. The potential applications and limitations of the technique are discussed.
Dynamic electron beam induced methods are applied to determine the local electrical field distribution of devices with small depletion regions. The dissipation volume generated by the electron beam is much larger than the depletion region during these investigations. The frequency behavior of the electron beam induced signal must be analyzed in order to determine the field strength accurately. The...
We demonstrate a scanning near-field photon emission microscope (SNPEM) for monitoring photon emission sites with spatial resolution beyond the diffraction limit. Success of SNPEM analysis strongly depends on the sensitivity of photon emission detection. We show that scattering dielectric probe (SDP) is capable of providing both sub-100nm resolution and compatible sensitivity at emission wavelengths...
A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better...
Electron beam induced current (EBIC) microscopy is applied for time-resolved and stroboscopic analyses. For the first time, it is possible to generate EBIC maps of dynamically biased devices using a novel setup. This technique allows investigations of diffusion and drift processes as well as variations of electric field distributions inside an active device
A setup is described which allows investigations of electric field distributions in the top layers of a dynamically driven power device by means of time-resolved electron beam induced currents (EBIC). Functionality of the field termination structures, e.g. guard rings can be visualized under transient bias conditions. Reverse and forward recovery of an 800-V diode was investigated by this technique...
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