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Hot-carrier, inducing source-drain current (IDS) increase in high-voltage p-channel lateral DMOS (LDMOS) transistors, is investigated. At low gate voltage (VGS) and high drain voltage (VDS), electrons are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel towards the source side (Figure 1). The source drain current...
This work demonstrates that NBTI assessment by fast wafer level reliability methods is possible in a quantitative manner. This involves excluding time periods from the stress time that are used for restoration of damage recovered during stress interruption and a calibrated back extrapolation of measured recovery traces to short delay times based on the universal recovery equation. The development...
The challenges of measuring by means of fast WLR the Vt degradation caused by temperature bias stress are discussed in this work. Two methods, the fast two point measurement with smart intermediate stress (SIS) and the back-extrapolation based on measuring the recovery curve are compared. Considering the properties of the test equipment an adjusted SIS approach is implemented in order to get an equivalent...
In recent literature several measurement methods were introduced to characterize the Vth-degradation due to NBTI considering the recovery phenomenon. To our knowledge each method has a severe problem or at least a significant disadvantage. Either there are long delay times, the accuracy is not satisfactory or it is not possible to implement the method with customary equipment. A compromise is to perform...
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