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The capabilities of memristors to serve as artificial synapses in neural network type of circuits have been recently recognized. These two-terminal analog memory devices offer valuable advantages in terms of circuit architectures. In particular, with their room temperature processes and large diversity coming from chemistry, organic memristors represent a chance to develop devices that can be densely...
We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of...
We propose an overview of our works on carbon nanotube field effect transistors (CNTFETs) which are well suited for high frequency applications. Using single-walled carbon nanotube (SWNT) samples containing 99% pure semiconducting SWNTs, we have achieved operating frequency above 80GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of networks of...
We show that optic ally-gated carbon nanotube field effect transistors can be used as 2-terminal like devices with light sensitivity and memory capabilities. In particular, their channel resistivity can be adjusted precisely, within a large range and memorized. These devices can thus be used as synapses in neural network type of circuits. We demonstrate experimentally these properties, build a device...
In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical...
In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available...
Hybrid Nano (e.g. Nanotube, Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become one of the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore's law. A behavioral simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors...
CNFETs have been characterized under large signal conditions at 600 MHz with an original active load pull setup using a LSNA. A non linear model of CNFET has been established and validated by comparison with the experimental results. Using this non linear model, design of circuits can be considered, allowing the optimization in non linear behavior.
Chemically and biochemically-directed assembly of nanotubes (NT) for electronics is reviewed. Examples of new field-effect devices prepared this way either for high frequency (40GHz) operation or for applications to an optoelectronics multilevel memory are presented. A route towards (bio)molecular interconnects for NTs is outlined
The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency FT of 1 GHz, with a slope of -20dB/decade, for the first time
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