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As technology developed, semiconductor moves to 10nm and the beyond. Since pitch becomes tighten and tighten, double patterning and triple patterning attracted researchers' attention [1]. Self-aligned double patterning (SADP) is one of the most popular double patterning methods. The primary idea of SADP is the core and spacer fabrication [2,3]. Herein, three commercial CCP etchers are employed for...
As the density of flash memory devices, especially NAND flash, increases considerably in the past decade [1, 2]. Consequently, the feature size of cells, or the pitch critical dimension (CD), shrinks remarkably and, as a result, the aspect ratio (AR) of the gate, including control gate (CG) and floating gate (FG), is going much higher than before. Such AR value could be up to 6:1 or even higher, which...
GeSbTe (GST) is extensively researched due to its amazing phase changing property which can be widely employed in Phase Change Memory (PCRAM). GST etching is extremely critical process during the device fabrication. In this study, three different halogens or halides, including Cl-based, F-based and Br-based GST etching process were investigated. Results show Br-based etching process is nondestructive...
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