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In this paper, a novel algorithm for tracking multiple targets is proposed. The algorithm incorporates subspace tracking with Kalman filtering to improve tracking performance. At each recursive step of the Kalman filter, subspace tracking is first combined with the MUSIC spectrum to provide angle estimates which are used as measurement data. To avoid abnormally large errors caused by crossing trajectory,...
MHEMT technology using metamorphic buffer layers growing on GaAs substrate can overcome InP substrate issues. Several researchers have demonstrated reliable MHEMT devices, mainly with the drain bias at 1 V. This work, however, demonstrated for the first time MHEMT devices operated at drain voltage greater than 3 V for the amplifier application. We have demonstrated the power MHEMT at 3.5V drain bias...
ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT transistors and the B-C, B-E/C and BE protect diodes was evaluated. After ESD protection circuits on chip level been investigated, the authors then established a simply B-E diode protection circuit with only 10μmx10μm...
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