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High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic,...
Due to the high efficiency and force density, linear switched flux permanent magnet machine (LSF-PMM) is gaining more and more attention in direct drive technology. For conventional LSFPPM, the structure enables the PMs and windings to be arranged on the same side, which largely reduces the manufacture cost [1]. However, with the insert of PMs into adjacent teeth, limited by the volume of primary,...
In order to lower the cost, the switched-flux linear motor (SFLM) is proposed by combining both PMs and armature windings in short mover, which avoids long armature or long PMs as normal PMLMs. Moreover, SFLM combines the merits of linear motor and rotatory switched-flux motor, so they exhibit the advantages of bipolar flux-linkage and high thrust force density. It is more appropriate to be applied...
A 1200V, 25A bi-directional silicon UMOS-IGBT has been successfully fabricated and characterized using a hydrophobic bonding process at low temperature (400°C) for the first time. The static and dynamic performance of our previous bi-directional DMOS-IGBT using a new developed bonding approach with glass carrier wafers are also shown in this paper as a comparison.
A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.
This paper reports on modeling of simultaneous switching noise (SSN) in 3D TSV-based system with multiple IC chips stacked and connected through TSVs. TSVs and other components are modeled using full-wave electromagnetic tools to extract equivalent circuit models. Power distribution network (PDN) combining on-chip and off-chip components are simulated with SPICE. The voltage noise generated by switching...
In today's electric vehicles (PHEV/HEV/EV), an extra cooling loop is needed to lower the power-electronics coolant temperature below about 65°C from the radiator coolant temperature of 105°C. One way to reduce the cost of future electric vehicles is to eliminate the extra cooling loop by developing reliable high-temperature power inverter modules that can be cooled directly from the radiator coolant...
devices show pronounced bipolar multilevel resistive switching behaviors and negative capacitance effects. The active layer was grown on Nb-doped by molecular beam epitaxial technology. With the aid of forward or reverse bias, the devices can be switched to insulating or different conductive states. The devices show prominent...
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