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The three-dimensional (3-D) NAND flash memory technology has been considered as a promising candidate for future memory solutions, because it overcomes the scaling limitation and reliability issues faced by conventional planar memory. Even though 3-D NAND flash memory structures have many merits, self-heating effect is aggravated seriously due to the poor thermal conductivity of some of the materials...
A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated...
This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along...
This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Driftdiffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such...
The effects of metallic ion (Al, Ti, or La) doping in HfO2 or ZrO2 on the behaviors of oxygen vacancies (V0) such as the formation energy, density of states, and migration energy were investigated by using first principles calculations. The calculations show that, 1) the doping causes an upward shift of deep V0 levels; 2) dopant radius has a weak impact on the relaxed formation energy of V0 (Ejv)...
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