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Fixing the doping dosage in VT implant process, as the doping energy is lower; contributing the good p-n junction controllability, the punch-through voltage (VPT) at 6keV doping energy is greater than that at 10keV, no matter what the long-channel devices are. This phenomenon is similar to the trend of the DIBL values for channel width = 0.12μm at 10keV are slightly larger than that at 6keV, too.
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization...
Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm)...
The embedded SiGe source/drain stressor helpful to promote the drive current involves etching out the source/drain silicon and replacing it with SiGe filler. This process uses the lattice mismatch between silicon and germanium atoms making the silicon channel compressive. This compressive stress enhances hole mobility, and the pMOSFET performance can be enhanced. In this study, the characteristics...
Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si0.775Ge0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are...
The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH3) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy...
Fin-FET is so expected because it protects Ioff current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as the gate is biased. In this study, the fin-thickness effect is to be noticeably discussed. The correlated...
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