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Under the same nitridation annealing treatment, the device performance for the lower nitrogen concentration in high-k dielectric treatment seems better than that with the higher one. In this stress test combining the recovery test, the recovery efficiency and the degradation rate in lower N2 concentration is more impressive than that with higher one, too. These results demonstrate the adequate N2...
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and...
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure, which can be fabricated by using only two photomasks, is presented. The process damage of back-channel can be avoided and the gate-to-source/drain capacitance of an a-IGZO TFT is significantly reduced. As a result, the more fast and low cost TFT circuits can be achieved.
The embedded SiGe source/drain stressor helpful to promote the drive current involves etching out the source/drain silicon and replacing it with SiGe filler. This process uses the lattice mismatch between silicon and germanium atoms making the silicon channel compressive. This compressive stress enhances hole mobility, and the pMOSFET performance can be enhanced. In this study, the characteristics...
Keeping good contact of the armature-rail interface (ARI) is essential for electromagnetic launch technology. To investigate the contact mechanism of ARI and improve the contact condition, the elastic-plastic deformation of the monolithic aluminum armature (MAA) under the contact force is analyzed. Contact force, contact area, and the distribution of contact pressure are calculated, and several kinds...
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