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Based on fundamental understanding of oxide breakdown (BD) physics established for thin oxides, we demonstrate that product circuit malfunction such as SRAM Vmin failure due to intrinsic TDDB can be accurately predicted. This prediction is based on a viable methodology using power-law voltage acceleration and progressive BD.
A simple and robust reliability assessment methodology based on failure-current criteria is presented for ultra-thin gate oxides. This methodology only employs two parameters in the final failure distribution analogous to the standard first breakdown methodology. A method to extract these two parameters from the experimental stress test data is also presented which successfully reduces the difficulties...
Unlike in NFET devices, the understanding of progressive BD in PFETs stressed in inversion requires the consideration of several breakdown paths wearing out in parallel and competing to cause the final device failure. In this work, we consider the implications of this competition on the statistical properties of progressive breakdown in ultra-thin-gate-oxide PFETs stressed in inversion mode. Voltage...
In this work, we show that the post-breakdown behavior of the extrinsic breakdown (BD) mode in ultra-thin gate oxides exhibits the same characteristics as the intrinsic breakdown mode. Although the first BD statistical time to breakdown distributions of intrinsic and extrinsic populations are inherently different, our results indicate that the progressive BD distribution, its voltage acceleration,...
Breakdown (BD) characteristics and electron transport across thin SiO2 films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in TBD/QBD polarity dependence and shallower Weibull slopes commonly observed in PFET for TOX>2nm. For thin oxides (1.8nm<TOX<2.9nm), QBD data and Weibull slopes are found to be in excellent agreement...
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