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Different from conventional unipolar type 1D1R RRAM devices, in this paper, a bipolar type 1D1R RRAM device structure is firstly proposed and successfully demonstrated by the combined TiOx-based Schottky diode and Cu/HfO2/Pt bipolar RRAM cell. Reliable and uniform self-compliance resistive switching characteristics are obtained by imposing current compliance using the reverse bias current of the TiO...
The adoption of lead-free solders accelerates interfacial reaction because they have higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-W-P (6∼7 wt.% P, and 15∼16 wt.% W) alloy to be used as the soldering metallization due to its good thermal stability. Comparison was made with the results obtained from the conventional...
HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F2 and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation...
Electrolessly plated Ni-P has been extensively studied due to its high coating uniformity, selectivity and low coating stress. However, the use of lead-free solders accelerates interfacial reaction because they have higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-Sn-P (6~7 wt.% of P and 15~17 wt.% of Sn) alloy to...
This paper presents an in-depth electrical characterization of contact resistance between metal and vertically aligned carbon nanotubes (CNTs) grown under various conditions. Following the bottom-up approach of interconnect fabrication processes in the nanoelectronics industry, a via test structure to extract the contact resistance is designed and fabricated. The contact resistance is extracted by...
The electrolessly plated Ni-P has been extensively studied due to its coating uniformity, selectivity and low coating stress. However, the use of lead-free solders accelerates interfacial reaction because its higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-Sn-P (7~8 wt.% of P and 1.4 wt.% of Sn) alloy to be used as...
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