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In this work high-field/current stress and breakdown properties of Ag gated MIS structures containing thin films of Hf:Ta2O5/SiOxNy insulating stacks on Si with total thickness of 8 nm were studied. Two dominant effects are observed during the constant current stress of Ag-Hf:Ta2O5/SiOxNy-Si structures. The first one is reversible trapping of negative charges on preexisting traps. The second one is...
Al doped Ta2O5 (4; 11; 15 nm) stacks on nitrided Si obtained by rf sputtering were studied with respect to their structural, dielectric and electrical properties. Results show that the initial double-layer structure (doped Ta2O5 and interfacial SiON layer) transforms during the formation of the top Al electrode into a three-layer structure, which contains an additional layer between the Al electrode...
Response of Ta2O5 stacks with Al and Au gates to voltage stress at gate injection is studied by probing at various voltage/time conditions. The pre-existing traps govern this response, and the impact of gate-induced defects is stronger. Two processes, electron trapping at pre-existing traps and positive charge build-up, are suggested to be responsible for generation of stress-induced leakage current...
The effect of various electrodes (Al, W, TiN) deposited by evaporation (Al) and sputtering (W, TiN) on the electrical characteristics of thermal Ta2O5 capacitors has been investigated. The leakage currents, breakdown fields, mechanism of conductivity and dielectric constant are discussed in the terms of possible reactions between Ta2O5 and electrode material as well as electrode deposition process-induced...
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