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Photoacoustic (PA) spectra were made on Sb-doped ZnSe samples grown by metalorganic vapor phase epitaxy (MOVPE). The samples deposited at a low temperature under irradiation show the PA spectrum with a sharp edge near the band gap and with three distinct peaks. From the Sb flow rate dependence of PA peaks, two of them seem to be related to Sb impurities. Non-doped sample shows only one peak, which...
Sb-doped ZnSe samples were deposited on the (001)GaAs substrate by metalorganic vapor-phase epitaxy (MOVPE). Isothermal capacitance transient spectroscopy (ICTS) and spectral analysis of deep-level transient spectroscopy (SADLTS) were used to characterize deep levels of Sb-doped ZnSe. The p-type sample grown by MOVPE at 490 o C in the darkness shows three ICTS peaks. Three deep levels were...
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