Photoacoustic (PA) spectra were made on Sb-doped ZnSe samples grown by metalorganic vapor phase epitaxy (MOVPE). The samples deposited at a low temperature under irradiation show the PA spectrum with a sharp edge near the band gap and with three distinct peaks. From the Sb flow rate dependence of PA peaks, two of them seem to be related to Sb impurities. Non-doped sample shows only one peak, which is tentatively ascribed to the deep level associated with Se defects.