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Self-heating effect (SHE) has become a significant concern for device performance, variability and reliability co-optimization due to more confined layout geometry and lower-thermal-conductivity materials adopted in advanced transistor technology, which substantially impacts the integrated circuit (IC)'s design schemes. In this work, a new methodology for evaluation of SHE in both digital and analog...
The traps induced degradation of the Al2O3 and LaAlO3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al2O3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected...
The voltage dependence of the low-frequency noise of GaN/AlGaN HEMTs is usually modeled in terms of mobility fluctuations. Noise measurements in commercial devices before and after proton irradiation and/or voltage stress have been found instead to be more consistent with number fluctuations. Low-frequency noise measurements vs. temperature show defect-related peaks in energy at ∼ 0.2 eV, ∼ 0.5 eV,...
In this paper, we comprehensively explore the hot carrier degradation (HCD) in multiple-fin SOI FinFETs under DC and AC stress condition. We understand the degradation mechanism in different fin numbers, different temperatures and different AC stress frequencies. Meanwhile, the impact of self-heating effect on hot carrier degradation has also been investigated.
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