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The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation,...
Voltage driving is a commonly used method to program the resistive switching memory. However, a question of whether voltage driving or current driving is preferred has never been answered. For periphery circuit design, one should first consider which kind of source should be adopted. In this work, we systematically evaluated the performance of Cu/HfO2/Pt memory device by using current sweeping or...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
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