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In this paper it is shown that HfO2 and HfZrO oxides suffer from large VT instabilities, up to 230mV, when the device width (W) is scaled down to 80nm. It is explained by undesirable lateral oxygen diffusion through the spacers, which mainly modifies the metal workfunction in narrow transistors. HfSiO(N) oxides exhibit a much better immunity to this effect, attributed to a different crystallinity...
Three-dimensional multi-channel field-effect transistor (MCFET) gate stack and series resistance are investigated and optimized by specifically developed integration processes, characterization methods, and numerical simulations. First, the impact of a TiN/HfO2 gate stack on embedded-gate MCFET structure performance is studied. Both TiN/SiO2 and N+poly-Si/SiO2 gate stacks were introduced in the MCFET...
In this work, we present an experimental and theoretical study of nitride trap devices with a HTO/Al2O3 bi-layer blocking oxide. Such SAONOS (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) devices are compared with standard SONOS (Silicon/HTO/Nitride/Oxide/Silicon) and SANOS (Silicon/Alumina/Nitride/Oxide/Silicon) memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed,...
Si wafers were intentionally roughened by isotropic plasma etching to reach RMS values (from 0.15 to 1.4 nm) comparable to those measured by AFM on multichannel devices. Isotropic plasma selective etching degraded mobility by less than 5% for a RMS les 0.7 nm at high transverse electric field. This mobility decrease is enhanced at low field because of fixed charges at the Si/SiO2 interface (-8x10...
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