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This paper describes the role of sulphur on corrosion phenomena at the interface between the Cu ball and Al bondpad. Sulphur is usually linked to the adhesion promotor which is used to improve package robustness and second bond reliability, but can have other detrimental effects. A variety of techniques such as (in-situ) HTSL, chemical analysis of sulphur and performing a DOE with compound variants...
Stitch crack is a recurring failure mechanism for many years in semiconductor packaging. Currently, the combination of highly filled mold compounds, and copper wire increases the risk for stitch cracks after temperature cycling (TC). Firstly, highly filled mold compounds generally have a Coefficient of Thermal Expansion (CTE) that is much lower than that of copper, and a much higher elastic modulus...
Nowadays highly filled epoxy molding compounds are used as material for encapsulation of microelectronic devices. These molding compounds always contain a very low concentration of ionic impurity. In addition ionic species can originate from chemical processes inside the encapsulation. In the presence of an electrical field ions will migrate through the encapsulation, which might eventually result...
The supply current of plastic encapsulated microelectronic devices in the presence of a high potential source can increase abnormally due to parasitic gate leakage. According to reliability qualification standards, stress during a parasitic gate leakage test is applied by a corona discharge at a thin tungsten needle placed a few centimeters above the devices under test. The gate leakage sensitivity...
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