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An 80 V class integrable lateral trench power MOSFET based on a shallow trench (~1.0 mum) structure with a low Figure of Merit (RontimesQg) for high frequency switching applications is presented. A simulated optimized MOSFET exhibits a Figure of Merit of 240 mOhm-nC, which is over 2.5X improvement on the best reported lateral trench power MOSFETs in the same voltage class. Prototype devices from the...
In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (Ron times Qg) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed...
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