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The fabrication of a smart interposer for millimeter wave applications is described in this article. The process flow and fabrication steps are presented. A special focus is made on the electrical characterization of a specific backend routing lines and the wafer level molding material laminated on the interposer. RF properties up to 67 GHz are reported: the backend routing CPW lines exhibit an attenuation...
This paper is dedicated to the full integration of a new silicone-based material for Molding-Underfilling (MUF) on silicon interposer wafers containing Through Silicon Vias (TSVs) and top dice. The developments were carried out in the frame of “silicon package” where the silicon interposer is either reported on P-BGA or directly assembled on board. After a materials screening with regard to warpage...
Value at Risk (VaR) is an appropriate method in financial world for evaluating risks. The method measures the losses within a considered time interval and a defined confidence level in actual currency. The simplicity and objectivity of VaR concludes to the idea to apply this method for power systems risk assessment. In this paper the methodology is applied for risk evaluation in the context of asset...
The value at risk (VaR) is a popular method in financial world. VaR measures the worst expected loss over a given horizon under normal market conditions at a given confidence level. This procedure summarizes objectively the exposure to market risk and the probability of adverse move. So VaR measurement can be applied as benchmark of different portfolio, as control instrument for asset owners and as...
The transient response of both junction isolated (JI) and dielectrically isolated (DI) CMOS circuits has been investigated in three FXR environments of differing energy spectrums. The offset recovery times have been measured and analyzed for both structures. It is shown that while the DI circuit (HD4007) did not exhibit a four layer type latchup action, its transient response persisted for a time...
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