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We report on the low-frequency phase-noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors employing HfAlO as the gate dielectric. Some devices tested exhibited noise spectra deviating from the well-known 1/fγ spectrum. These devices showed broad peaks in the noise spectral density versus frequency plots, which shifted toward higher frequencies at elevated...
In conclusion, this paper reports a number of significant developments in III-V MOSFET devices. Retaining a subthreshold slope of 60-70 mV/decade for gate lengths down to 100 nm with an EOT of 3.4 nm shows for the first time that the flatband mode device architecture is tolerant to short channel effects. In addition, a generic silicon compatible process flow for the realization of fully self-aligned...
The prospect for the introduction of III-V semiconductors into the channel of n-type MOSFETs and thus replace Si with a high mobility material for 22 nm technology generation and beyond is examined in detail. The so-called implantfree (IF) III-V MOSFET architecture option is presented showing a fabricated n-type IF demonstrator suitable for scaling. We then focus on a prediction of the potential performance...
There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly...
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