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In this work, the effect of high temperature storage (HTS) on the stress in and around Cu TSVs in 3D stacked chips is studied by scanning white beam x-ray microdiffraction. The x-ray microdiffraction measurements were conducted on different die levels in the stacked chips before and after HTS test. High resolution mappings of stress distribution were obtained and compared between pre-HTS and post-HTS...
The characteristics of thermal stresses in a five-stacked memory dies containing through-silicon vias (TSVs) were measured with synchrotron x-ray microdiffraction. The measurements were performed in and around the Cu vias for both the top and bottom dies. With scanning white beam x-ray microdiffraction, high resolution mappings of stress distribution were obtained. The results provided a direct observation...
In this study, we investigated the kinetics of intermetallic compound (IMC) growth in Pb-free Sn-based microbumps with Cu or Ni under-bump metallization (UBM) in three-dimension (3D) integration. An analysis was formulated to study the multi-phase multi-component kinetics for solid-state phase transformation of intermetallic growth. A numerical optimization method called simulated annealing (SA) was...
In this study, electromigration (EM) reliability of TSV-microbump (μ-bump) joints was investigated. Sn-based μ-bumps with three different schemes of metallization were tested under current stressing at elevated temperatures. EM-stressed μ-bumps, together with thermal anneal-only μ-bumps and as-received controls, were cross-sectioned and characterized using scanning electron microscope (SEM), energy...
A 3-D finite element method (FEM) model considering the elasticity anisotropy, thermal expansion anisotropy, and plasticity of beta-Sn is established. The Voronoi diagrams are used to generate the geometric patterns of grains of the Sn coating on Cu leadframes. The crystal orientations are assigned to the Sn grains in the model using the X-ray diffraction (XRD) measurement data of the samples. The...
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