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Chalcogenide glasses have nonlinear refractive indices ∼200 times greater than fused silica, and offer windows of transparency extending far into the mid-IR. These properties make them interesting for supercontinuum (SC) generation at wavelengths beyond 2 μm. Various different waveguiding structures incorporating chalcogenide glasses have been reported in literature, including microstructured fibers...
A process development for stretchable silicon electronics encapsulated in a layer of polydimethylsiloxane is presented. Stretchability is achieved by segmenting the normally rigid silicon substrate into small islands (<2??2 mm2) and connecting these by flexible metal interconnects. The metal interconnects have a mesh shape providing stretchability and improved reliability. The mesh-shaped interconnects...
The possibility to conform microelectronic circuits onto non-planar or even high-curvature surfaces is of increasing interest for future applications. A promising flexible substrate concept based on vertical thinning/lateral partitioning and the substrate transfer technology is developed. Test structures for flexibility testing which consist of a partitioned ultra-thin poly-silicon layer sandwiched...
In this contribution, our progress in development of deformable single-crystalline-silicon electronics by modification of the previously reported ultra-thin and flexible CIRCONFLEX technology is presented. Additional deformability/reliability is achieved by lateral segmentation of silicon/dielectric layers and connecting these using flexible electrical interconnect. In the current study, segment thickness...
This work focuses on the effect of deposition rate in the longitudinal version of this materials system. Since two phase segregation must occur during the sputter deposition process, it is anticipated that deposition rate may be a crucial deposition parameter, and that high deposit rates may not allow this segregation to proceed to completion in each layer of the depositing film before being buried...
A low-loss (< 0.04 dB/cm, in the entire S-, C-, and L-bands), silicon-oxynitride (SiON) platform has been developed. Polarization insensitive directional couplers and compact, low loss (< 2 dB) AWGs with integrated spot-size converters have been fabricated.
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