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In this paper, the processing and integration challenges addressed during the 3D packaging of a ~400 mm2 logic die are presented and discussed. The logic die was fabricated using GLOBALFOUNDRIES' 14-nm technology with 5x55 µm Through Silicon Vias (TSVs) integrated in the process as a via middle flow [1]. Fully fabricated test wafers were thinned down to 50 µm, using Amkor Technology's Middle End of...
This paper describes the process development of TSV integration with 20nm CMOS technology and device performance characterization for 3D integrated circuit (3DIC) enablement. 6×55um Through-silicon-via (TSV) on 20nm CMOS technology has been developed and demonstrated. Key module process issues, such as V0 high resistance, M1 high leakage and Cu pumping which prevent TSV to be integrated with BEOL...
This paper presents the impact of wafer thinning process on GLOBALFOUNDRIES high-k metal gate CMOS wafers with TSV. The initial study of wafer backside surface finish and thickness was performed on non-TSV wafers, and the impact on active devices such as: MOS (metal-oxide semiconductor) capacitors, ring oscillators, analog circuit performance and front end of line (FEOL) reliability macros was characterized...
Each new technology node brings new design and technology challenges making it harder to maintain Moore's law in a cost effective way. Maintaining cost effectiveness is becoming a major challenge for IDMs, fabless companies and foundries. 3D/2.5D technologies offer some unique advantages over traditional scaling such as higher power efficiency, higher bandwidth and heterogeneous integration which...
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