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An adequate sequential etching though dielectrics, silicon and permanent adhesive material was successfully developed for the damascene interconnects in the face-to-back bumpless TSV Wafer on Wafer (WOW) processes. The induced bowing taken place at the etching of permanent adhesive was optimized and no void Cu metallization was achieved. According to those TSV technology, the upper and lower stacked...
Fine-pitch backside via last through silicon via (TSV) process flow is demonstrated as a qualified candidate to be used in the construction of 3D-IC structure. Glue and its bonding conditions are critical to the final yield of the process. Different glues and temporary bonding conditions are investigated to find out the optimized stable process flow. Different daisy chain lengths are used to evaluate...
Process issues and challenges of three-dimensional integrated circuit (3DIC) using through-silicon-via (TSV) are extensively investigated. Key enabling process technologies in the TSV formation and thin wafer handling are discussed with a viewpoint of TSV process integration. Test element groups (TEG) are designed to characterize the process performance and optimizations of some key process modules...
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