The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we present a detailed investigation of the impact of different Lightly Doped Drain (LDD) implants and different well doping on the low frequency noise performance of n- and p-MOS devices from a CMOS technology node. We investigate the impact of three different devices. Two with the same LDD implant but different well doping and one with different LDD implant cocktail. The results demonstrate...
In this paper, we present a detailed investigation of the impact of hydrogen anneal on the low frequency noise spectra of n- and p-MOS devices from an advanced CMOS technology node. We investigate the impact of hydrogen anneal in three different wafers, one with one time hydrogen anneal step (1×H2), one with two times (2×H2) and one without hydrogen anneal (w/o H2). The results demonstrate that the...
This paper presents the characterization and modeling of poly resistors fabricated within a 0.35μm HV CMOS technology (Vmax ≪= 120V). For all investigations three diverse sheet resistances, 50 Ω/sq, 650 Ω/sq and 1200 Ω/sq are taken into account; which have in different temperature characteristics with positive, negative and low temperature coefficients. In addition the voltage dependence of voltage...
This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been developed to improve the reliability and accuracy of the measurements. All test cases are fabricated with...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.