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The following topics are dealt with: integrated circuit design; microsystems design; microelectronics technology; microelectronics packaging; testing; reliability; power electronics; signal processing; embedded systems; and information technology.
In the frame of the European CARE project, we designed and constructed three apparatus dedicated to full characterization of low voltage piezoelectric actuators. These piezostacks are integrated in fast active cold tuning systems (FACTS) and used for dynamic stabilisation of the resonant frequency of Superconducting RF (SRF) cavities. The three facilities we developed allow the measurement of electromechanical...
This paper presents a brief overview of the monolithic integration in the field of power electronics. Emphasis is mainly put on the functional integration concept. The role that this mode of integration, according to its classical definition, played to enable the monolithic integration of the power device with auxiliary elements (mainly protections and supply) for the realization of new functions...
We review recent physics-based, compact models for thin film transistors (TFTs), including amorphous (a-Si), polysilicon (poly-Si), nanocrystalline silicon (nc-Si), and organic TFTs. The models accurately reproduce the DC characteristics for different geometries. We also present a universal TFT model paradigm, which allows to obtain a suitable estimation of TFT characteristics using only eight parameters,...
STARC (Semiconductor Technology Academic Research Center) is a research consortium co-founded by major Japanese semiconductor companies, whose mission is to contribute to the growth of the Japanese semiconductor industry by developing leading-edge SoC design technologies. One of the achievements enabled by the academia collaboration is HiSIM (Hiroshima University STARC IGFET Model) an advanced MOSFET...
The selection of drain current, inversion coefficient, and channel length for each MOS device in an analog circuit results in significant tradeoffs in performance. The selection of inversion coefficient, which is a numerical measure of MOS inversion, enables design freely in weak, moderate, and strong inversion and facilitates optimum design. Here, channel width required for layout is easily found...
In this paper, a carrier-based modelling approach (CBMA) is extended to develop a unified compact model for the symmetric double-gate (DG) and surrounding-gate (SRG) MOS transistors with the same mathematic formulation via the parameter transformation. The unified model formulation makes it easy to handle different device structures with different physical solutions, avoiding the need to solve the...
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