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The authors report the growth of B-doped Si/SiGe multiple quantum wells (MQW) structures by rapid thermal chemical vapor deposition (RTCVD) for intersubband transitions with extreme uniformity and interface abruptness. An excellent well to well uniformity is reported as measured through high resolution SIMS
The adsorption of titanium on titanium dioxide TiO 2 (110) has been studied by X-ray photoelectron spectroscopy (XPS) and low energy ion scattering (LEIS). The XPS data for Ti overlayers are interpreted using peak fitting based on experimental standard spectra. 4 of Ti deposited at 150 K reacts with the substrate to produce 12 of intermediate oxidation state Ti. Adsorption of neutral...
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