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Low turn-on voltage junction barrier Schottky (JBS) diodes were fabricated using very thin (20 nm) and extremely highly Mg doped (2×1020 cm−3) p+-GaN layer placed on top of n−-GaN epitaxial layers grown on n-GaN substrates. By omitting p-GaN layers in conventional p+-GaN/p-GaN/n−-GaN vertical p-n junction diodes, device processing has been eased and low specific on-resistances (Ron<0.3 mΩcm2) have...
New guard ring structures were adopted to increase the breakdown voltages of the vertical GaN p-n diodes. With this structure, a voltage drop occurs in the guard ring portions by inserting resistance devices between the guard ring portions and the main p-n diode portions, and it is possible to attain higher breakdown voltages by the voltage drop at the most sensitive outer region of the diodes. By...
Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages...
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