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This study examines different approaches to determining the chip failure rate that occurs due to dielectric cracking under C4 sites during chip joining. We show that testing of the strength of individual C4s by a single bump shear technique gives a strength distribution that is well described by a Weibull distribution with a Weibull modulus that lies in the range 10–20. Simulations of the spatial...
Hard disk drives (HDDs) are among the most widely used information storage components in these digital times, since they were commercialized in late 1970s. The perpendicular magnetic recording (PMR) media using (CoCrPt)x(Metal Oxide)1−x magnetic alloys have reached an areal density of 700GB/in2 and beyond[1]. The current researches focus on achieving higher grain refinement and increasing uniaxial...
In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress...
A thermal interface material (TIM) is typically a compliant material with high thermal conductivity that is applied between a heat-generating chip and a heat spreader in an electronic package. For a high-conductivity polymeric TIM, the adhesion strength between the TIM and its mating interfaces is typically weak, making the TIM susceptible to degradation when subjected to environmental stresses. At...
The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer...
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