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A low-power fully-integrated transceiver for K-band wireless communication was developed using 0.18 μm SiGe BiCMOS technology. Transformers are used to stack circuit blocks directly and to connect signals in multiple paths, and a balun is used to combine differential signals efficiently. These passive-interstage circuit schemes make it possible to reduce power dissipation without degradation in performance...
A 20-GHz 1-V VCO with dual-transformer configuration and a self-stabilized pseudo-static frequency divider were developed using 0.18-mum SiGe BiCMOS technology. For the VCO, a combination of two types of transformers, which exhibit high-input impedance and capacitive-input impedance, contributes to the output of two sets of differential signals for mixers and the divider, maintaining both a wide frequency-tuning...
In this work, a 59 GHz push-push VCO is based on a new output circuit concept to simultaneously achieve both wide tuning range and high output power. It achieves a wide frequency tuning range of 13.9 GHz, high output power of 1.2 dBm, and low phase noise of-108 dBc/Hzat 1 MHz offset frequency. To the authors' knowledge, its figure of merit (FOMT) of -189.6 dB is the best for silicon-based 50 GHz class...
A 27-GHz voltage-controlled oscillator MMIC (VCO-MMIC), featuring low phase noise of -115 dBc/Hz at a 1-MHz offset frequency and large output power of +3.7 dBm with low DC-power dissipation of 111 mW, was developed using a 0.18-mum SiGe BiCMOS process. A novel merged-transformer matching circuit, in which an inductor in an oscillation loop is reused as a primary inductor of the transformer, contributes...
A full-rate 10 Gb/s transceiver core employing a tri-state binary PD with 100ps gated digital output is implemented in a 90nm CMOS process. Direct drive from the VCO is utilized to eliminate the 10GHz clock buffer current. The RX exhibits a recovered-clock jitter of 906fsrms and an input sensitivity of 5.9mVpp. The TX generates a jitter of 5mUIrms. The chip consumes 250mW.
24-GHz low noise amplifier (LNA) and voltage controlled oscillator (VCO) in 0.25-mum SiGe BiCMOS technology were developed to create low-cost radio frequency (RF) modules for short-range ultra-wideband radar systems. A two-stage shunt-feedback LNA that used inductive biasing had a -3-dB bandwidth of 11.4 GHz, a noise figure of 3.8 dB at 24 GHz, and a group delay deviation within 21 ps (from 10 GHz...
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