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Physics-based device models integrated into harmonic-balance microwave CAD simulators add flexibility and the ability to investigate both device and circuit design parameters before fabrication and prototyping. Accurate formulation of these models requires that relevant physical phenomena affecting the performance of these devices be identified and suitable models developed. In this work it is shown...
In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin...
High voltage HFETpsilas fabricated from the AlGaN/GaN heterojunction demonstrate excellent RF output power performance. The nitride HFETpsilas produce RF output power greater than an order of magnitude higher than available from GaAs and InP based devices. However, the HFETs demonstrate a reliability problem where the dc current and RF output power continually decrease as a function of time. The reliability...
Aluminum nitride (AlN) films have attractive physical properties, such as wide bandgap (6.2 eV), high thermal conductivity (320 W/mK), and good match of both thermal expansion coefficient and lattice constant to those of Si substrate . Based on these properties, AlN films can be applied in surface acoustic wave (SAW) devices, memories devices, and optoelectronic devices. It has been reported in our...
Due to high mobility (1000-1500 cm/V2), high sheet charge density (~1013 cm-2), and high electron saturation velocity (~2.0times105 cm/s), AlGaN/GaN HFET's were shown to have great potential for linear operation in high dynamic range module. However, significant linearity degradation was found in practical devices compared to that predicted from theoretic derivation. In this work it is demonstrated...
A physics-based analytic model is built based on the discovery of a new zone in AlGaN/GaN HFETs that is observed in 2D device simulations, especially at high drain bias. The zone is located in the drain access region and is named the "charge deficit zone" after its particular property of a partially filled quantum well. This zone plays an important role when the HFET is under high drain...
High voltage HFET's fabricated from nitride semiconductors utilizing the AlGaN/GaN heterojunction demonstrate excellent RF performance with RF output power greater than an order of magnitude higher than available from GaAs and InP based devices. However, the nitride devices demonstrate a reliability problem where the dc current and RF output power continually decrease as a function of time. The reliability...
HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated from traditional semiconductors such as GaAs and InP. Nitride-based HFET's can support drain bias voltages in the range of 40-50 V, and have been biased as high as 120 V using device designs that make use of field-plate technology. However,...
Wide bandgap semiconductors are used to fabricate field-effect transistors with significantly improved RF output power compared to GaAs and InP-based devices. The critical electric fields for avalanche ionization in wide bandgap semiconductors, such as SiC and GaN, are about an order of magnitude greater than for traditional semiconductors such as Si, GaAs, and InP. Nitride-based HFET's can support...
n-GaN/AlxGa1-xN/n-GaN (n-I-n) heterostructure devices are investigated for potential applications as pressure sensors in extreme environments. Theoretical modeling of n-In sensors performed with various compositions (x equiv 0.1, 0.15, & 0.2) and thicknesses (10 nm and 20 nm) of AlxGa1-xN suggests that electrical current will decrease with increasing pressure and this effect becomes more significant...
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