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Deformations of metal interconnects, cracks in interlayer dielectrics and passivation layers in combination with plastic-packaging are still a major reliability concern for integrated circuit power semiconductors. In order to describe and understand the failure mechanism and its root cause, already a lot of work has been done in the past. However for the first time the impact of the edge profile of...
In this paper key design issues and considerations of a low-cost 3-D Cu-TSV technology are investigated. The impact of TSV on BEOL interconnect reliability is limited, no failures have been observed. The impact of TSV stress on MOS devices causes shifts, further analysis is required to understand their importance. Thermal hot spots in 3-D chip stacks cause temperature increases three times higher...
In this paper we will report on full wafer electrical characterization based on resistance of various lengths of daisy chain ranging from 10 to 100 TSV's. The resistance of single TSV including metal contact is in range from 5~20 mOhms. Thermo-mechanical model was developed to investigate the impact of processing and temperature cycling on the mechanical and delamination stresses induced in the structure...
We describe the design challenges for a low-cost 130nm 3D CMOS technology with 5μm diameter at 10μm pitch Cu-TSV. We investigate electrical, thermal and thermo-mechanical issues encountered in 3D. The electrical yield and ESD of TSVs is reviewed and designers are advised how to ensure yield and reliability. For thermal and thermo-mechanical we'll indicate based on experimental characterization, the...
This paper presents a reliability model for wafer level chip scale packages (WLCSP) assembled with Sn4%Ag 0.5%Cu (SAC 405) solder. The reliability model is based on a creep constitutive model that takes into consideration the dimensions of the solder joints and a thermo-mechanical fatigue crack growth model. The creep constitutive model was derived from over 250 constant load creep tests performed...
In this paper we review the mechanical properties and reliability results of stretchable interconnections used for electronic applications. These interconnections were produced by a Moulded Interconnect Device (MID) technology in which a specially designed metal interconnection if fully embedded with an elastic material such as polyurethane or silicone. In order to get a first impression of the expected...
The authors show for the first time that metal-crush failures can also be caused by mechanical impact which occurs during handling of the package and pick and place processes. So, not only thermo-mechanical effects might cause these failures. The paper also show a clear correlation between the observed failures on sample IC that returned from the field, and the failures observed on samples which were...
This study is aimed at analysing the reliability of a three-dimensional (3D) chip stacked package under cyclic thermal loading. The critical areas in the 3D chip stacked package are defined with finite element modeling (FEM) based simulations to correlate the thermal cycling experiments. The 3D chip stacked package consists of two 300mum thick Si chips vertically connected with Sn-Ag-Cu solder bump...
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