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We investigate key design issues of a low-cost 3D Cu-TSV technology: impact of TSV on MOS devices and interconnect, reliability, thermal hot spots, ESD, signal integrity and impact on circuit performance. We experimentally verify their importance and propose changes in current design practices to enable low-cost systems.
Full-chip dynamic electro-thermal simulation is achieved by coupling a circuit simulator and a thermal solver. By letting both simulations run with their specific time-step, a higher computational efficiency is achieved. A scheduler synchronizes temperatures in the circuit simulator and dissipation patterns in the thermal solver on an dasiaas-necessarypsila basis. The 3D geometry for the thermal solver...
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