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A modified gain modeling shows Ge has a wide gain bandwidth from 1550 nm to 1770 nm. Optimized laser structure predicts that Ge laser can achieve a lasing threshold of 2.2 kA/cm2.
We present recent progress in monolithic Ge-on-Si lasers for on-chip electronic-photonic integration, with a highlight on electrically-pumped Ge-on-Si lasers with ∼1 mW output at λ∼1530-1650 nm.
We present the first CMOS compatible, electrically pumped Fabry-Perot Ge laser with larger than 1mW output power and a gain spectrum width of nearly 200nm in the range from 1520nm to 1700nm.
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
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