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Band structure calculations of graphene nano-ribbons in the presence of edge disorder using the tight-binding method have been used to find a simple analytical formulation for the dispersion relationship of extended electronic states. Once inserted in a Monte-Carlo simulator accounting for phonons and edge roughness scattering, the analytical model helped us understand the ribbon width dependence...
This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
In this paper, two Monte-Carlo simulators implementing different models of the influence of carrier quantization on the electrostatics and transport are applied to sub-100nm double-gate SOI devices. To this purpose a new stable and efficient scheme to implement the contacts in the simulation of DG SOI devices is introduced first. Then, results in terms of drain current and microscopic quantities are...
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