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We propose and demonstrate a novel process to fabricate planar avalanche photodiodes using selective area growth (SAG) followed by a single Zn diffusion through the SAG material using the same dielectric mask. The tapered surface profile of the SAG epitaxy due to the enhancement of the growth rate in the vicinity of the mask edge modifies the diffusion profile, resulting in a gradual reduction of...
We investigate the materials properties and dark currents of planar InP/InGaAs avalanche photodiodes (APDs) in which the p-dopant, Zn, is introduced by diffusion in an MOCVD reactor using dimethylzinc (DMZn) as the source. APD dark currents are compared with low-temperature photoluminescence (PL), electrochemical capacitance–voltage (ECV) and secondary ion mass spectroscopy (SIMS) measurements of...
We investigated the diffusion of zinc into InP/InGaAs avalanche photodiode structures using dimethylzinc in an MOCVD reactor. Diffusion profiles were measured by secondary ion mass spectrometry and compared with cleaved cross-sections imaged by scanning electron microscopy, in order to accurately target the diffusion depth for device fabrication. The dependence of the diffusion depth on the diffusion...
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