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This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Ga0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting...
This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance...
High-temperature characteristics of a symmetrically-graded delta-doped InAlAs/InxGa1-xAs/GaAs (x=0.5 rarr 0.65 rarr 0.5) metamorphic high electron mobility transistor (MHEMT) have been investigated. The thermal threshold coefficients, defined as deltaVth/deltaT, are superiorly low to be 0.9 mV/K from 300 K to 420 K and -0.75 mV/K from 420 K to 500 K, respectively. The present MHEMT device, with stabilized...
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