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A Ga-Se half-sheet van der Waals surface termination on Si(111) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally...
ZnSe has been grown on van der Waals surfaces of the layered chalcogenides InSe and GaSe. Its growth morphology, epitaxial relation and electronic band lineup were studied using XPS, UPS, LEED and HRSEM. The II-VI materials showed a strong tendency to form clusters on the low energy van der Waals surfaces. LEED measurements showed a ZnSe(111)/Ga(In)Se(0001) epitaxial relation with strong facetting...
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