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A Ga-Se half-sheet van der Waals surface termination on Si(111) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally difficult to achieve a complete surface coverage by GaSe by this preparation procedure.
Department of Materials- and Earth Sciences, Surface Science Division, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
Department of Materials- and Earth Sciences, Surface Science Division, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
Department of Materials- and Earth Sciences, Surface Science Division, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany
Department of Materials- and Earth Sciences, Surface Science Division, Darmstadt University of Technology, Petersenstrasse 23, D-64287 Darmstadt, Germany