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This work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and chemically bound in self-limiting monolayers to the semiconductor surface. Subsequent annealing enabled diffusion of the dopant atom into the substrate. Material characterization...
This paper reviews the experimental state-of-the-art in access resistance reduction in Ge devices. Special attention is paid to the doping and thermal annealing state-of-the-art, highlighting in particular those techniques that have been applied to Si devices, but have not yet been properly optimised in Ge. We also look forward to emerging novel processes for access resistance reduction.
Ideal source and drain regions rely on high dopant solubility in the crystalline substrate, in order to boost activation and reduce sheet resistance, and low dopant diffusivity, to facilitate device scaling. High-concentration doping of Ge can be quite a substantial problem, as it is difficult to activate impurity atoms to a high enough level, prevent them escaping during thermal treatments, while...
The junctionless nanowire transistor (JNT) has recently been demonstrated to be a promising device for sub-20-nm nodes. So far, most devices were made on semiconductor-on-insulator substrates. The aim of this work is to evaluate the concept of multigate germanium (Ge) JNTs on bulk substrates, using a dedicated modeling methodology. The variation of device performance due to geometry, channel, and...
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