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Al 2 O 3 –Ta 2 O 5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al 2 O 3 /Ta 2 O 5 bilayers. The composition of the films was roughly 57% Al 2 O 3 and 43% Ta 2 O 5 and the total film thickness...
Nanolaminate dielectric films offer the possibility of tailoring the electrical properties of dielectric stacks for specific applications such as the tunnel dielectric for MIM diodes, storage capacitors, non-volatile memories, and TTFTs. Nanolaminates deposited via ALD have been reported to display properties that are not just a weighted average of the component materials but depend upon the laminate...
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