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A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO 2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N...
We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfXIO and p-type metal gate IrO2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year DeltaVth decay ratio within 18%, higher erasing speed with DeltaVth of 3V within...
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