The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
With the rapid development of information technologies and wide use of computer networks, computer forensics has become an active research area due to increasingly criminal activ ities in communication networks and information security. The research of computer forensics studies thorough and effective security technologies and approaches for investigation of computer crimes, with a focus on the truth,...
Low energy oscillations (LEOs), lower than the band gap of Ga(Mn)As, were observed well in the photo-modulation reflectance and reflectance spectra of GaMnAs grown by low temperature molecular-beam epitaxy. By simulating the oscillations of the reflectance spectra, These LEOs were contributed to the variable refractive indexes induced by the high hole density in GaMnAs.
The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr0.7Ca0.3MnO3) interface has been studied in detail. Dielectric spectroscopy (frequency range ~ 10 Hz-10 Mz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (VTh) and a very fast `write' speed (~100 ns or...
Consumer demands have become more diversified and even sophisticated, which resulted in much shorter product life cycle and more intensive market competition across the world. New product development has become significant for companies to maintain their competitiveness. To ensure success in the current era of globalization, it is imperative for companies to understand new product development model...
A Si3N4/SiO2 double-tunneling layer is incorporated in a MONOS memory device structure with high-k HfO 2 charge storage layer for NAND-type memory application. Fast erasure of charges trapped in the high-k layer is enabled by enhanced hole current, accomplishing a large memory window of 2.9 V with electrical stress at 17.5 V for 100 (as and at -18 V for 5 ms. Incorporation of 1.6-1.8 nm thick Si3N...
We demonstrate electrical properties of an advanced memory structure with high-k dielectric stack of HfAlO/HfSiO/HfXIO and p-type metal gate IrO2. Combining advantages of high-k HfAlO, good trapping capability of HfSiO, and high work function of the IrO2 gate, we were able to attain much better retention with 10-year DeltaVth decay ratio within 18%, higher erasing speed with DeltaVth of 3V within...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.