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Continued advancements in Si-based technologies - in particular SiGe BiCMOS technologies - have enabled mmWave integrated circuits designed for 77GHz automotive radar systems to reach production-level maturity. This paper will discuss the technology requirements for mmWave automotive radar products, and also present the evolution of the respective key figures of merit. Si-based CMOS challenges and...
A 90nm BiCMOS technology with a SiGe:C HBT having fMAX >400GHz is presented. Both lateral and vertical scaling of the SiGe bipolar transistor are described, enabling SiGe HBT performance metrics fT/fMAX of ∼230GHz/400GHz to be achieved with a minimum gate delay of <3ps. A medium breakdown device is also integrated, achieving an fT*BVCEO product of 310GHz*V. CMOS implant and HBT process optimizations...
Several performance improvements on a 180nm SiGe:C BiCMOS technology targeted for improved millimeter-wave performance are described. SiGe HBT performance metrics, including fT, fMAX, and CML gate delay are improved 20–30%. fT/fMAX of 260/350GHz are achieved with a minimum gate delay of 3.2ps, without impacting the thermal budget of the technology. BEOL and ground plane optimization reduced transmission...
On-chip integration of artificial (slow-wave) transmission lines (ATL) formed by periodic loading of microstrip lines with MIM capacitors is demonstrated, for the first time, using 0.18μm SiGe:C BiCMOS. We demonstrate 2× length-reduction of λ/4-stub RF choke and filters at 38GHz and at 77GHz. Due to the extensive use of TLs in mmWave design, ATL has more potential...
A millimeter-wave hyperabrupt-junction varactor (HAVAR) enabling 77 GHz VCO/TX with 13-15 GHz tuning range and better than -70 dBc/Hz phase noise at 100 kHz offset has been integrated in SiGe:C BiCMOS for automotive radar products. The HAVAR predominantly uses existing processes for low-cost integration and minimal process complexity. Optimization of TR-Q thru HAVAR width allows TR up to 2.7 and Q...
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