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We demonstrate, using a foundry-based 65nm bulk technology, mmWave CMOS VCOs in the range of 38GHz and 77GHz with highest reported continuous tuning range (14%–25%), competitive phase noise (−88dBc/Hz at 1MHz offset at 77GHz), and high Pout (6dBm at 77GHz) needed to readily integrate with CMOS PA and to tolerate PVT variations. The DC power consumption of the 77GHz VCO is ∼190mW and that of the 38GHz...
On-chip integration of artificial (slow-wave) transmission lines (ATL) formed by periodic loading of microstrip lines with MIM capacitors is demonstrated, for the first time, using 0.18μm SiGe:C BiCMOS. We demonstrate 2× length-reduction of λ/4-stub RF choke and filters at 38GHz and at 77GHz. Due to the extensive use of TLs in mmWave design, ATL has more potential...
This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at Pin = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature...
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