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In this paper, we comprehensively explore the hot carrier degradation (HCD) in multiple-fin SOI FinFETs under DC and AC stress condition. We understand the degradation mechanism in different fin numbers, different temperatures and different AC stress frequencies. Meanwhile, the impact of self-heating effect on hot carrier degradation has also been investigated.
We propose and demonstrate an optical-burst-and-transient-equalizer (OBTE) on silicon-on-insulator (SOI) to provide a compact and low-cost solution to compensate gain- transient, gain-spectrum-tilt and to equalize the upstream packets amplitude in EDFA-amplified WDM-PON.
Helium ion implantation in silicon can modify both the linear optical absorption of below bandgap energy photons and the free carrier lifetime. Ion implanted silicon may thus be used as low-loss photodetectors for in-channel power monitoring in communication systems. We also analyze the consequences of reduced carrier lifetimes for nonlinear photonic devices.
We propose and demonstrate a polarization-insensitive dynamic-gain-transient-compensator (DGTC) for compensating EDFA-amplified-signals after dynamic optical add/drop. 15-dB receiver sensitivity improvement was achieved in the compensated channel. The DGTC can be monolithic-integrated on silicon-on-insulator (SOI) platform
An ultra-wide-band (UWB) filter based on silicon-on-insulator (SOI) multimode interferometer (MMI) couplers and a Mach-Zehnder interferometer (MZI) was proposed. It can select signal wavelength (around 1556 nm) while removing pump wavelength (1440 nm) which is 15.6 THz away
We study the infrared photoresponse of silicon waveguides which were implanted with helium ions. The observed enhancement in responsivity at 1.55 mum wavelength was sufficient for use in in-line channel power monitoring applications
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