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Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at...
Wafer-scale-assembly (WSA) technology has been developed for compact and light-weight applications at the Northrop Grumman Corporation. To insure successful insertion of WSA hermetic MMICs for military and space applications, high-reliability demonstration is essential. In this study, we performed two-temperature lifetesting to evaluate the reliability performance of WSA hermetic GaAs HEMT MMICs....
Wafer-level-packaging (WLP) AISb/InAs HEMT receivers have been developed for lightweight and ultralow-power applications. To warrant successful insertion of WLP AISb/InAs HEMT receivers for military and space applications, highreliability demonstration is essential. In this study, we performed three-temperature lifetesting to evaluate the reliability performance of WLP AlSb/InAs HEMT receivers. For...
The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the decrease of transconductance (gm) and the gate current (IG) increase. The IG increase was found to correlate with material degradation on the gate-recess and Al...
RF stability measurements have been performed on over 300 MBE and MOCVD grown devices with and without a thin (~10 Aring) AlN interlayer located between the AlGaN barrier and GaN channel. 70 % of devices with the AlN interlayer showed an increase in gate leakage during RF stress, while only 28 % of the devices without the AlN interlayer showed an increase in gate leakage during RF stress. An increase...
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